BAR9002LRHE6327XTSA1
Infineon Technologies
Infineon Technologies
RF DIODE PIN 80V 250MW TSLP-2
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BAR9002LRHE6327XTSA1 RF Diode by Infineon Technologies is a top-tier choice in the Diodes - RF classification, offering exceptional efficiency and durability. Part of the Discrete Semiconductor Products family, this diode features fast switching speeds and minimal signal loss, perfect for high-frequency environments. Its robust design caters to industries like telecommunications, aerospace, and medical equipment. Whether used in RF amplifiers or signal modulators, the BAR9002LRHE6327XTSA1 delivers consistent results. Choose Infineon Technologies for reliable RF diodes that meet the highest industry standards.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 80V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
- Resistance @ If, F: 800mOhm @ 10mA, 100MHz
- Power Dissipation (Max): 250 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2-7
Related Products
Skyworks Solutions Inc.
SMPA1304-011LF
MACOM Technology Solutions
MLP7130-11
Infineon Technologies
BAR6305E6327HTSA1
Infineon Technologies
BAR6302LE6327XTMA1
Microchip Technology
LXS101-143-5
Toshiba Semiconductor and Storage
JDV2S07FSTPL3
MACOM Technology Solutions
MSAT-N25
MACOM Technology Solutions
MA4E2054B1-287T
MACOM Technology Solutions
MSS40-244-B20
Skyworks Solutions Inc.