BAS116E6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3
$0.37
Available to order
Reference Price (USD)
3,000+
$0.03810
6,000+
$0.03351
15,000+
$0.02892
30,000+
$0.02739
75,000+
$0.02586
150,000+
$0.02433
Exquisite packaging
Discount
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Upgrade your electronic systems with the BAS116E6327HTSA1 single rectifier diode by Infineon Technologies. As a vital component in the Discrete Semiconductor Products range, this diode offers superior rectification with minimal power loss. Its high-temperature tolerance and fast switching make it ideal for use in electric vehicles, industrial automation, and renewable energy systems. The BAS116E6327HTSA1 is also a preferred choice for consumer electronics, including TVs and audio equipment, where efficiency and reliability are paramount. Choose Infineon Technologies's BAS116E6327HTSA1 for advanced semiconductor solutions.
Specifications
- Product Status: Not For New Designs
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 5 nA @ 75 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Operating Temperature - Junction: 150°C (Max)
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