BAS16LTH-G3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic designs with the BAS16LTH-G3-08 single rectifier diode from Vishay General Semiconductor - Diodes Division. This diode, part of the Discrete Semiconductor Products family, offers exceptional rectification efficiency and thermal stability. Its compact design and high current capacity make it suitable for space-constrained applications like mobile devices, laptops, and IoT gadgets. The BAS16LTH-G3-08 is also ideal for automotive electronics, including alternators and voltage regulators, where reliability is critical. Vishay General Semiconductor - Diodes Division's commitment to innovation ensures that the BAS16LTH-G3-08 meets the highest industry standards for performance and longevity.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 100 V
- Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: DFN1006-2A
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Panjit International Inc.
UF2A_R1_00001
Diodes Incorporated
RS1BB-13-F
Comchip Technology
CDBER0130R-HF
Solid State Inc.
1N1347RB
onsemi
BAS16LT3
Solid State Inc.
1N1203RA
Panjit International Inc.
FR2J_R1_00001
Taiwan Semiconductor Corporation
S3JB R5G
Vishay General Semiconductor - Diodes Division
VS-EPU6006L-N3
Taiwan Semiconductor Corporation