BAS516,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 100V 250MA ESC
$0.19
Available to order
Reference Price (USD)
8,000+
$0.02760
Exquisite packaging
Discount
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The BAS516,L3F from Toshiba Semiconductor and Storage is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Toshiba Semiconductor and Storage's BAS516,L3F for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 ns
- Current - Reverse Leakage @ Vr: 200 nA @ 80 V
- Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
- Operating Temperature - Junction: 150°C (Max)
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