BAT1504RE6327HTSA1
Infineon Technologies
Infineon Technologies
RF DIODE SCHOTTKY 4V SOT23-3
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Experience unparalleled RF performance with the BAT1504RE6327HTSA1 RF Diode from Infineon Technologies, a standout in the Discrete Semiconductor Products category. This diode is designed for low noise and high linearity, essential for sensitive RF applications. It is widely used in medical imaging, defense systems, and wireless infrastructure. The BAT1504RE6327HTSA1 reflects Infineon Technologies's expertise in delivering high-quality Diodes - RF that meet the demands of modern technology.
Specifications
- Product Status: Obsolete
- Diode Type: Schottky - 1 Pair Series Connection
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 110 mA
- Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz
- Resistance @ If, F: 18Ohm @ 5mA, 1MHz
- Power Dissipation (Max): -
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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