BAT15099RE6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 4V 100MW SOT143-4
$1.02
Available to order
Reference Price (USD)
3,000+
$0.33751
Exquisite packaging
Discount
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Optimize your RF circuits with the BAT15099RE6327HTSA1 RF Diode from Infineon Technologies, a leading product in the Discrete Semiconductor Products division. This diode offers excellent impedance matching and low insertion loss, crucial for high-frequency operations. Widely used in cellular networks, GPS devices, and RF sensors, the BAT15099RE6327HTSA1 is a reliable choice for engineers and designers. Infineon Technologies ensures that each diode meets rigorous quality standards, making it a trusted component in the Diodes - RF market.
Specifications
- Product Status: Active
- Diode Type: Schottky - 1 Bridge
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 110 mA
- Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT-143-3D
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