BAT1704E6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 4V 150MW SOT23-3
$0.51
Available to order
Reference Price (USD)
3,000+
$0.08957
6,000+
$0.08139
15,000+
$0.07321
30,000+
$0.06912
75,000+
$0.06217
150,000+
$0.06012
Exquisite packaging
Discount
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Enhance your RF applications with the BAT1704E6327HTSA1 RF Diode from Infineon Technologies, a standout in the Discrete Semiconductor Products range. This diode is engineered for superior thermal stability and low forward voltage drop, making it a versatile solution for various RF needs. Its applications span across TV tuners, RFID systems, and microwave communications. The BAT1704E6327HTSA1 is a testament to Infineon Technologies's commitment to innovation and quality in the Diodes - RF sector. Invest in a diode that guarantees performance and longevity.
Specifications
- Product Status: Active
- Diode Type: Schottky - 1 Pair Series Connection
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
- Resistance @ If, F: 15Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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