BAT1705E6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 4V 150MW SOT23-3
$0.07
Available to order
Reference Price (USD)
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$0.07000
500+
$0.0693
1000+
$0.0686
1500+
$0.0679
2000+
$0.0672
2500+
$0.0665
Exquisite packaging
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The BAT1705E6327HTSA1 RF Diode by Infineon Technologies is a top-tier choice in the Diodes - RF classification, offering exceptional efficiency and durability. Part of the Discrete Semiconductor Products family, this diode features fast switching speeds and minimal signal loss, perfect for high-frequency environments. Its robust design caters to industries like telecommunications, aerospace, and medical equipment. Whether used in RF amplifiers or signal modulators, the BAT1705E6327HTSA1 delivers consistent results. Choose Infineon Technologies for reliable RF diodes that meet the highest industry standards.
Specifications
- Product Status: Obsolete
- Diode Type: Schottky - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
- Resistance @ If, F: 15Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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