BAT62-02LSE6327
Infineon Technologies
Infineon Technologies
MIXER DIODE, LOW BARRIER
$0.08
Available to order
Reference Price (USD)
1+
$0.08000
500+
$0.0792
1000+
$0.0784
1500+
$0.0776
2000+
$0.0768
2500+
$0.076
Exquisite packaging
Discount
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The BAT62-02LSE6327 RF Diode by Infineon Technologies is a high-reliability component in the Diodes - RF classification, part of the broader Discrete Semiconductor Products range. Its excellent thermal management and high-frequency capabilities make it suitable for RF filters, oscillators, and transceivers. Industries such as aerospace, telecommunications, and consumer electronics benefit from its superior performance. Choose Infineon Technologies's BAT62-02LSE6327 for a diode that delivers precision and durability in every application.
Specifications
- Product Status: Active
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 40V
- Current - Max: 20 mA
- Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: PG-TSSLP-2-1
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