BAT62E6327
Infineon Technologies
Infineon Technologies
MIXER DIODE, LOW BARRIER
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The BAT62E6327 RF Diode by Infineon Technologies is a high-performance component in the Diodes - RF category, designed for precision and efficiency. Part of the Discrete Semiconductor Products family, it features low capacitance and high isolation, perfect for RF switching and detection. Its applications include satellite communication, radar systems, and IoT devices. The BAT62E6327 stands out for its reliability and advanced technology, making Infineon Technologies a preferred choice for RF diode solutions.
Specifications
- Product Status: Active
- Diode Type: Schottky - Anti-Parallel
- Voltage - Peak Reverse (Max): 40V
- Current - Max: 20 mA
- Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143-4
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