BAT63-07WH6327
Infineon Technologies
Infineon Technologies
MIXER DIODE, LOW BARRIER
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Experience unparalleled RF performance with the BAT63-07WH6327 RF Diode from Infineon Technologies, a standout in the Discrete Semiconductor Products category. This diode is designed for low noise and high linearity, essential for sensitive RF applications. It is widely used in medical imaging, defense systems, and wireless infrastructure. The BAT63-07WH6327 reflects Infineon Technologies's expertise in delivering high-quality Diodes - RF that meet the demands of modern technology.
Specifications
- Product Status: Active
- Diode Type: Schottky - 2 Independent
- Voltage - Peak Reverse (Max): 3V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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