BAT6804WE6327BTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 8V 150MW SOT323-3
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The BAT6804WE6327BTSA1 RF Diode by Infineon Technologies is a high-performance component in the Diodes - RF category, designed for precision and efficiency. Part of the Discrete Semiconductor Products family, it features low capacitance and high isolation, perfect for RF switching and detection. Its applications include satellite communication, radar systems, and IoT devices. The BAT6804WE6327BTSA1 stands out for its reliability and advanced technology, making Infineon Technologies a preferred choice for RF diode solutions.
Specifications
- Product Status: Obsolete
- Diode Type: Schottky - 1 Pair Series Connection
- Voltage - Peak Reverse (Max): 8V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 1pF @ 0V, 1MHz
- Resistance @ If, F: 10Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
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