BAT6806E6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 8V 150MW SOT23-3
$0.12
Available to order
Reference Price (USD)
1+
$0.12000
500+
$0.1188
1000+
$0.1176
1500+
$0.1164
2000+
$0.1152
2500+
$0.114
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BAT6806E6327HTSA1 RF Diode by Infineon Technologies is a versatile and efficient solution in the Diodes - RF segment of Discrete Semiconductor Products. With its high breakdown voltage and fast recovery time, it is ideal for RF power amplifiers and mixers. Applications range from consumer electronics to industrial automation, showcasing its adaptability. Trust Infineon Technologies to provide a diode that combines performance, durability, and cutting-edge technology for all your RF needs.
Specifications
- Product Status: Obsolete
- Diode Type: Schottky - 1 Pair Common Anode
- Voltage - Peak Reverse (Max): 8V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 1pF @ 0V, 1MHz
- Resistance @ If, F: 10Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
NXP USA Inc.
BAP51LX,315
Solid State Inc.
1N3913R
MACOM Technology Solutions
MSS20-141-0402
MACOM Technology Solutions
MA4L031-186
MACOM Technology Solutions
MSS30-154-B10B
MACOM Technology Solutions
MA4P504-1072T
Rohm Semiconductor
RN142SMT2R
MACOM Technology Solutions
MSS39-148-B10B
Micro Commercial Co
BAP51-02-TP
onsemi