BAT6806WH6327XTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 8V 150MW SOT323-3
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Optimize your RF circuits with the BAT6806WH6327XTSA1 RF Diode from Infineon Technologies, a leading product in the Discrete Semiconductor Products division. This diode offers excellent impedance matching and low insertion loss, crucial for high-frequency operations. Widely used in cellular networks, GPS devices, and RF sensors, the BAT6806WH6327XTSA1 is a reliable choice for engineers and designers. Infineon Technologies ensures that each diode meets rigorous quality standards, making it a trusted component in the Diodes - RF market.
Specifications
- Product Status: Obsolete
- Diode Type: Schottky - 1 Pair Common Anode
- Voltage - Peak Reverse (Max): 8V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 1pF @ 0V, 1MHz
- Resistance @ If, F: 10Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
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