BAT68E6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 8V 150MW SOT23-3
$0.44
Available to order
Reference Price (USD)
3,000+
$0.10467
6,000+
$0.09941
15,000+
$0.09152
30,000+
$0.08626
75,000+
$0.07837
150,000+
$0.07574
Exquisite packaging
Discount
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The BAT68E6327HTSA1 RF Diode by Infineon Technologies is a high-reliability component in the Diodes - RF classification, part of the broader Discrete Semiconductor Products range. Its excellent thermal management and high-frequency capabilities make it suitable for RF filters, oscillators, and transceivers. Industries such as aerospace, telecommunications, and consumer electronics benefit from its superior performance. Choose Infineon Technologies's BAT68E6327HTSA1 for a diode that delivers precision and durability in every application.
Specifications
- Product Status: Active
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 8V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 1pF @ 0V, 1MHz
- Resistance @ If, F: 10Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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