BAW101E6433
Infineon Technologies
Infineon Technologies
BAW101 - HIGH VOLTAGE DOUBLE DIO
$0.10
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The BAW101E6433 from Infineon Technologies sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Infineon Technologies's rigorous quality control ensures the BAW101E6433 maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io) (per Diode): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1 µs
- Current - Reverse Leakage @ Vr: 150 nA @ 250 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT143 (SC-61)
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