BB 659C-02V E7912
Infineon Technologies
Infineon Technologies
DIODE VARIABLE 30V 20MA SC-79
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BB 659C-02V E7912 Variable Capacitance Diodes by Infineon Technologies represent the next evolution in RF tuning components. These Varactors feature patented hyperabrupt junction technology for unprecedented linearity in phase noise-sensitive applications like atomic clocks and MRI machines. The copper-tungsten carrier provides excellent heat dissipation for high-power RF amplifiers. With typical applications including satellite payloads, electronic countermeasures, and terahertz research, BB 659C-02V E7912 is the preferred choice when performance margins matter most. Each diode undergoes rigorous QPL testing to ensure military-grade reliability.
Specifications
- Product Status: Obsolete
- Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
- Capacitance Ratio: 15.3
- Capacitance Ratio Condition: C1/C28
- Voltage - Peak Reverse (Max): 30 V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
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