BB 804 SF2 E6327
Infineon Technologies
Infineon Technologies
VARIABLE CAPACITANCE DIODE
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BB 804 SF2 E6327 series from Infineon Technologies delivers benchmark performance in Variable Capacitance Diode technology. These Varicaps feature an innovative multi-layer depletion region design that achieves ultra-low Rs (series resistance) for high-efficiency energy harvesting systems. Ideal for smart grid synchronizers, plasma research equipment, and millimeter-wave scanners, these diodes offer industry-leading Q values up to 500 at 1GHz. With radiation-hardened versions available for space applications, BB 804 SF2 E6327 demonstrates Infineon Technologies's commitment to pushing semiconductor boundaries. All products come with full traceability and counterfeit protection measures.
Specifications
- Product Status: Obsolete
- Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
- Capacitance Ratio: 1.71
- Capacitance Ratio Condition: C2/C8
- Voltage - Peak Reverse (Max): 18 V
- Diode Type: 1 Pair Common Cathode
- Q @ Vr, F: 200 @ 2V, 100MHz
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Infineon Technologies
BBY5302LE6327XTMA1
onsemi
MMBV2108LT1G
Diodes Incorporated
ZC835BTA
Infineon Technologies
BBY 55-02V E6327
Infineon Technologies
BBY5705WH6327XTSA1
Diodes Incorporated
ZMV834BTA
Diodes Incorporated
ZMDC953TA
Diodes Incorporated
ZMV832ATC
Infineon Technologies
BBY58-03WE6327
Diodes Incorporated