BB55502VH7912XTSA1
Infineon Technologies
Infineon Technologies
BB555 - VARIABLE CAPACITANCE DIO
$0.05
Available to order
Reference Price (USD)
1+
$0.05000
500+
$0.0495
1000+
$0.049
1500+
$0.0485
2000+
$0.048
2500+
$0.0475
Exquisite packaging
Discount
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BB55502VH7912XTSA1 Variable Capacitance Diodes by Infineon Technologies represent the next evolution in RF tuning components. These Varactors feature patented hyperabrupt junction technology for unprecedented linearity in phase noise-sensitive applications like atomic clocks and MRI machines. The copper-tungsten carrier provides excellent heat dissipation for high-power RF amplifiers. With typical applications including satellite payloads, electronic countermeasures, and terahertz research, BB55502VH7912XTSA1 is the preferred choice when performance margins matter most. Each diode undergoes rigorous QPL testing to ensure military-grade reliability.
Specifications
- Product Status: Active
- Capacitance @ Vr, F: -
- Capacitance Ratio: -
- Capacitance Ratio Condition: -
- Voltage - Peak Reverse (Max): -
- Diode Type: -
- Q @ Vr, F: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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