BB669E7904
Infineon Technologies
Infineon Technologies
VARIABLE CAPACITANCE DIODE
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
Discount
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BB669E7904 Variable Capacitance Diodes by Infineon Technologies represent the next evolution in RF tuning components. These Varactors feature patented hyperabrupt junction technology for unprecedented linearity in phase noise-sensitive applications like atomic clocks and MRI machines. The copper-tungsten carrier provides excellent heat dissipation for high-power RF amplifiers. With typical applications including satellite payloads, electronic countermeasures, and terahertz research, BB669E7904 is the preferred choice when performance margins matter most. Each diode undergoes rigorous QPL testing to ensure military-grade reliability.
Specifications
- Product Status: Active
- Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
- Capacitance Ratio: 20.9
- Capacitance Ratio Condition: C1/C28
- Voltage - Peak Reverse (Max): 30 V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
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