BB804SF1E6327
Infineon Technologies
Infineon Technologies
VARIABLE CAPACITANCE DIODE
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BB804SF1E6327 Variable Capacitance Diodes by Infineon Technologies represent the next evolution in RF tuning components. These Varactors feature patented hyperabrupt junction technology for unprecedented linearity in phase noise-sensitive applications like atomic clocks and MRI machines. The copper-tungsten carrier provides excellent heat dissipation for high-power RF amplifiers. With typical applications including satellite payloads, electronic countermeasures, and terahertz research, BB804SF1E6327 is the preferred choice when performance margins matter most. Each diode undergoes rigorous QPL testing to ensure military-grade reliability.
Specifications
- Product Status: Active
- Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
- Capacitance Ratio: 1.71
- Capacitance Ratio Condition: C2/C8
- Voltage - Peak Reverse (Max): 18 V
- Diode Type: 1 Pair Common Cathode
- Q @ Vr, F: 200 @ 2V, 100MHz
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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