BC807DS,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS 2PNP 45V 0.5A 6TSOP
$0.50
Available to order
Reference Price (USD)
3,000+
$0.06820
6,000+
$0.06138
15,000+
$0.05456
30,000+
$0.05115
75,000+
$0.04774
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BC807DS,115 BJT Array from Nexperia USA Inc. brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The BC807DS,115 undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 600mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
Related Products
Microchip Technology
JANSM2N3810U/TR
Linear Integrated Systems, Inc.
IT121 PDIP 8L
Intersil
CA3096CM96
Nexperia USA Inc.
PMBT3906VS,115
Central Semiconductor Corp
CMLT5088EM TR PBFREE
Diodes Incorporated
ZXT12N50DXTC
Rochester Electronics, LLC
CA3046
Texas Instruments
SN75469D
Microchip Technology
2N2920
Nexperia USA Inc.