BC817K16E6433HTMA1
Infineon Technologies
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
$0.05
Available to order
Reference Price (USD)
1+
$0.04980
500+
$0.049302
1000+
$0.048804
1500+
$0.048306
2000+
$0.047808
2500+
$0.04731
Exquisite packaging
Discount
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The BC817K16E6433HTMA1 Bipolar Junction Transistor (BJT) by Infineon Technologies is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the BC817K16E6433HTMA1 provides consistent performance in demanding applications. Choose Infineon Technologies for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 500 mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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