BC847AE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
$0.30
Available to order
Reference Price (USD)
3,000+
$0.03293
6,000+
$0.02971
15,000+
$0.02583
30,000+
$0.02325
75,000+
$0.02066
150,000+
$0.01722
Exquisite packaging
Discount
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The BC847AE6327HTSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the BC847AE6327HTSA1 is a reliable component for demanding applications. Infineon Technologies's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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