BC847AQAZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1010D-3
$0.32
Available to order
Reference Price (USD)
5,000+
$0.03893
10,000+
$0.03374
25,000+
$0.03201
50,000+
$0.03028
125,000+
$0.02855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BC847AQAZ Bipolar Junction Transistor (BJT) from Nexperia USA Inc. is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the BC847AQAZ is a reliable component for demanding applications. Nexperia USA Inc.'s dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 280 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
Related Products
Rohm Semiconductor
BC847BT116
onsemi
NSVBCP69T1G
onsemi
PN2907ATA
NXP USA Inc.
PMST6428,135
Rohm Semiconductor
2SA1579U3T106
Diodes Incorporated
MMSTA05-7-F
Diodes Incorporated
FCX493TA
onsemi
BC807-16LT3G
Diodes Incorporated
FMMT614TA
Nexperia USA Inc.