BC847AT-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN 45V 0.1A SOT523
$0.23
Available to order
Reference Price (USD)
3,000+
$0.04184
6,000+
$0.03680
15,000+
$0.03176
30,000+
$0.03008
75,000+
$0.02840
150,000+
$0.02560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the BC847AT-7-F Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BC847AT-7-F delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 150 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
Related Products
onsemi
FJA4210OTU
NTE Electronics, Inc
2N5886
Toshiba Semiconductor and Storage
2SA1162-Y,LXHF
Diodes Incorporated
BC847CQ-7-F
Solid State Inc.
PMD10K100
Diodes Incorporated
ZTX696BSTZ
Diotec Semiconductor
MPSA42BK
onsemi
2SC4488S-AN
MACOM Technology Solutions
JANTX2N5154
onsemi