BC847AW,135
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA BC847AW - SMALL SIG
$0.02
Available to order
Reference Price (USD)
10,000+
$0.01800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BC847AW,135 Bipolar Junction Transistor (BJT) from NXP USA Inc. is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the BC847AW,135 is a reliable component for demanding applications. NXP USA Inc.'s dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
STMicroelectronics
STX13003G-AP
Renesas Electronics America Inc
2SB566KC-E
Fairchild Semiconductor
FJX733YTF
onsemi
NSVBC848CLT1G
STMicroelectronics
BUL654
STMicroelectronics
STX13003-AP
onsemi
BC848CWT1
Rohm Semiconductor
2SCR502UBTL
Rohm Semiconductor
2SCR502EBTL
Nexperia USA Inc.