BC856BMBYL
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
$0.26
Available to order
Reference Price (USD)
10,000+
$0.03230
30,000+
$0.03040
50,000+
$0.02850
100,000+
$0.02660
Exquisite packaging
Discount
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Experience unmatched performance with the BC856BMBYL Bipolar Junction Transistor (BJT) by Nexperia USA Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the BC856BMBYL delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Nexperia USA Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: DFN1006B-3
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