BC857AE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
$0.34
Available to order
Reference Price (USD)
3,000+
$0.03802
6,000+
$0.03429
15,000+
$0.02982
30,000+
$0.02684
75,000+
$0.02386
150,000+
$0.01988
Exquisite packaging
Discount
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Upgrade your electronic designs with the BC857AE6327HTSA1 Bipolar Junction Transistor (BJT) by Infineon Technologies. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the BC857AE6327HTSA1 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Infineon Technologies for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 330 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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