BC857AW,135
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA BC857AW - SMALL SIG
$0.02
Available to order
Reference Price (USD)
10,000+
$0.01800
Exquisite packaging
Discount
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The BC857AW,135 by NXP USA Inc. is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the BC857AW,135 ensures efficient and stable operation. Backed by NXP USA Inc.'s reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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