BC857CQAZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1010D-3
$0.03
Available to order
Reference Price (USD)
5,000+
$0.03460
10,000+
$0.02941
25,000+
$0.02768
50,000+
$0.02595
125,000+
$0.02422
Exquisite packaging
Discount
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Optimize your electronic systems with the BC857CQAZ Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BC857CQAZ delivers superior performance in diverse environments. Nexperia USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 280 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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