BCP5516H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 60V 1A SOT223-4
$0.31
Available to order
Reference Price (USD)
1+
$0.30840
500+
$0.305316
1000+
$0.302232
1500+
$0.299148
2000+
$0.296064
2500+
$0.29298
Exquisite packaging
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Enhance your circuit designs with the BCP5516H6327XTSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BCP5516H6327XTSA1 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Infineon Technologies to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-10
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