BCP5616TQTA
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
$0.12
Available to order
Reference Price (USD)
1+
$0.11925
500+
$0.1180575
1000+
$0.116865
1500+
$0.1156725
2000+
$0.11448
2500+
$0.1132875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the BCP5616TQTA Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BCP5616TQTA is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diodes Incorporated to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2.5 W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
Related Products
Central Semiconductor Corp
2N6426 PBFREE
Diodes Incorporated
FMMT560TC
Toshiba Semiconductor and Storage
2SA2215,LF
Microchip Technology
JANSR2N2218AL
Microchip Technology
JANSR2N2907AUA
Sanyo
2SA1179-6-TB-E
Central Semiconductor Corp
2N3416 PBFREE
Nexperia USA Inc.
BST61,115
Diodes Incorporated
ZXTP2009ZTA
Diodes Incorporated