BCR 116S E6727
Infineon Technologies
Infineon Technologies
TRANS 2NPN PREBIAS 0.25W SOT363
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Optimize your designs with Infineon Technologies's BCR 116S E6727, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The BCR 116S E6727 is widely used in lighting systems, portable electronics, and automotive accessories. Infineon Technologies's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the BCR 116S E6727 is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 150MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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