BCR108E6433HTMA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 200MW SOT23-3
$0.05
Available to order
Reference Price (USD)
40,000+
$0.02537
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineers choose BCR108E6433HTMA1 for its exceptional linearity in amplification circuits. Infineon Technologies's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 170 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
onsemi
MUN2234T1G
Rohm Semiconductor
DTA143ZU3T106
Rohm Semiconductor
DTC124TCAT116
Rohm Semiconductor
DTA143ZMT2L
Toshiba Semiconductor and Storage
RN2111MFV,L3F
Nexperia USA Inc.
PDTA114TT,215
Rohm Semiconductor
DTA123JMT2L
Nexperia USA Inc.
PDTC114TMB,315
Diodes Incorporated
DDTC125TCA-7
Toshiba Semiconductor and Storage