BCR135E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 0.2W SOT23-3
$0.35
Available to order
Reference Price (USD)
3,000+
$0.03934
6,000+
$0.03458
15,000+
$0.02982
30,000+
$0.02824
75,000+
$0.02665
150,000+
$0.02401
Exquisite packaging
Discount
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The BCR135E6327HTSA1 from Infineon Technologies is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Infineon Technologies's expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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