BCR158WH6327
Infineon Technologies
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For designers seeking plug-and-play transistor solutions, BCR158WH6327 offers unmatched convenience. Infineon Technologies's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
Related Products
Infineon Technologies
BCR166E6327HTSA1
Nexperia USA Inc.
PDTB123YUX
Nexperia USA Inc.
PDTC143XMB,315
Nexperia USA Inc.
PBRP113ZT,215
Diodes Incorporated
DDTA123EUA-7-F
Toshiba Semiconductor and Storage
RN1105,LXHF(CT
Diodes Incorporated
DDTA123TE-7-F
Rohm Semiconductor
DTA115EMT2L
Nexperia USA Inc.
PDTA124EQBZ
Rohm Semiconductor