BCR183E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 50V SOT23-3
$0.35
Available to order
Reference Price (USD)
3,000+
$0.03934
6,000+
$0.03458
15,000+
$0.02982
30,000+
$0.02824
75,000+
$0.02665
150,000+
$0.02401
Exquisite packaging
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Meet the BCR183E6327HTSA1 Infineon Technologies's answer to modern circuit design challenges. This pre-biased bipolar transistor combines 2N3904 compatibility with enhanced thermal characteristics. Key applications include: Electric vehicle charging stations Industrial IoT gateways Smart meter modules With 100% automated production testing, each unit delivers military-grade reliability for critical infrastructure projects.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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