BCR183E6433HTMA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 200MW SOT23-3
$0.03
Available to order
Reference Price (USD)
1+
$0.03000
500+
$0.0297
1000+
$0.0294
1500+
$0.0291
2000+
$0.0288
2500+
$0.0285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCR183E6433HTMA1 represents Infineon Technologies's commitment to innovation in discrete semiconductors. This pre-biased single BJT transistor excels in: Automated test equipment HVAC control boards Robotics servo drives With hFE matching within 10% across production lots, it guarantees consistent performance. Its 50V VCEO rating handles demanding industrial environments with ease.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
onsemi
MUN2211T3G
Micro Commercial Co
DTC143ZE-TP
onsemi
NSBA143EF3T5G
onsemi
MUN2211JT1
Diodes Incorporated
DDTC123TE-7-F
Nexperia USA Inc.
PDTC143ZQCZ
Nexperia USA Inc.
PDTC123JT,215
onsemi
DTC124EET1G
Rohm Semiconductor
DTC143TEBTL
onsemi