BCR185E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 0.2W SOT23-3
$0.02
Available to order
Reference Price (USD)
36,000+
$0.02824
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineers choose BCR185E6327HTSA1 for its exceptional linearity in amplification circuits. Infineon Technologies's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Toshiba Semiconductor and Storage
RN1103MFV,L3XHF(CT
Infineon Technologies
BCR129FE6327
Rohm Semiconductor
DTA014TMT2L
Toshiba Semiconductor and Storage
RN2102,LF(CT
onsemi
DTC114YET1G
Rohm Semiconductor
DTC143TU3HZGT106
onsemi
SMMUN2211LT3G
onsemi
DTC113EET1G
Nexperia USA Inc.
PDTA114EU,115
NXP USA Inc.