BCR22PNE6327BTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN/PNP PREBIAS SOT363
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Discover the versatility of Infineon Technologies's BCR22PNE6327BTSA1, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The BCR22PNE6327BTSA1 is widely used in IoT devices, medical equipment, and renewable energy systems. Infineon Technologies's advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the BCR22PNE6327BTSA1 offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 130MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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