BCV29,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN DARL 30V 0.5A SOT89
$0.47
Available to order
Reference Price (USD)
1,000+
$0.16400
2,000+
$0.15200
5,000+
$0.14400
10,000+
$0.13600
25,000+
$0.13200
Exquisite packaging
Discount
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Optimize your electronic systems with the BCV29,115 Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BCV29,115 delivers superior performance in diverse environments. Nexperia USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 1.3 W
- Frequency - Transition: 220MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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