BCV29H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN DARL 30V 0.5A SOT89
$0.14
Available to order
Reference Price (USD)
5,000+
$0.16108
Exquisite packaging
Discount
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The BCV29H6327XTSA1 from Infineon Technologies is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the BCV29H6327XTSA1 is a reliable choice for both commercial and industrial use. Trust Infineon Technologies to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
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