BCV47E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
$0.09
Available to order
Reference Price (USD)
1+
$0.08533
500+
$0.0844767
1000+
$0.0836234
1500+
$0.0827701
2000+
$0.0819168
2500+
$0.0810635
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the BCV47E6327HTSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BCV47E6327HTSA1 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Infineon Technologies to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 360 mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Fairchild Semiconductor
FJC1308RTF
onsemi
NJVMJD243T4G
Central Semiconductor Corp
CMLT3820G TR PBFREE
onsemi
BCX70H-ON
Infineon Technologies
BCP5416E6433HTMA1
Nexperia USA Inc.
PDTC124XMB,315
onsemi
BC557CZL1
STMicroelectronics
BUL128D-B
Comchip Technology
BC858A-HF
onsemi