BCV47E6433HTMA1
Infineon Technologies
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
$0.07
Available to order
Reference Price (USD)
20,000+
$0.04909
Exquisite packaging
Discount
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Optimize your electronic systems with the BCV47E6433HTMA1 Bipolar Junction Transistor (BJT) from Infineon Technologies. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BCV47E6433HTMA1 delivers superior performance in diverse environments. Infineon Technologies's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 360 mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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