BCW 60C E6327
Infineon Technologies

Infineon Technologies
TRANS NPN 32V 0.1A SOT23
$0.03
Available to order
Reference Price (USD)
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$0.03000
500+
$0.0297
1000+
$0.0294
1500+
$0.0291
2000+
$0.0288
2500+
$0.0285
Exquisite packaging
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Upgrade your electronic designs with the BCW 60C E6327 Bipolar Junction Transistor (BJT) by Infineon Technologies. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the BCW 60C E6327 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Infineon Technologies for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
- Power - Max: 330 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23