BCW30LT1G
onsemi
onsemi
TRANS PNP 32V 0.1A SOT23-3
$0.26
Available to order
Reference Price (USD)
3,000+
$0.03133
6,000+
$0.02826
15,000+
$0.02457
30,000+
$0.02211
75,000+
$0.01966
150,000+
$0.01638
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCW30LT1G Bipolar Junction Transistor (BJT) from onsemi is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the BCW30LT1G is a reliable component for demanding applications. onsemi's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
- Power - Max: 300 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
NXP USA Inc.
BC817-25QA147
Panjit International Inc.
BC857C-AU_R1_000A1
NTE Electronics, Inc
NTE2429
onsemi
MMBT5551LT3G
Infineon Technologies
BC847CWH6778XTSA1
Rohm Semiconductor
2SB1732TL
Infineon Technologies
BCX70HE6433HTMA1
Diodes Incorporated
BC858C-7-F
Diotec Semiconductor
BC817-25
onsemi