BCW61AE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP 32V 0.1A SOT23
$0.05
Available to order
Reference Price (USD)
45,000+
$0.02806
Exquisite packaging
Discount
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The BCW61AE6327HTSA1 Bipolar Junction Transistor (BJT) by Infineon Technologies is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the BCW61AE6327HTSA1 provides consistent performance in demanding applications. Choose Infineon Technologies for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
- Power - Max: 330 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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