BCW61B,215
NXP Semiconductors
NXP Semiconductors
NEXPERIA BCW61B - SMALL SIGNAL B
$0.02
Available to order
Reference Price (USD)
3,000+
$0.04692
6,000+
$0.04140
15,000+
$0.03588
30,000+
$0.03404
75,000+
$0.03220
150,000+
$0.03036
Exquisite packaging
Discount
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Enhance your circuit designs with the BCW61B,215 Bipolar Junction Transistor (BJT) from NXP Semiconductors. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BCW61B,215 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NXP Semiconductors to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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