BCW68GE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP 45V 0.8A SOT23
$0.07
Available to order
Reference Price (USD)
42,000+
$0.03444
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the BCW68GE6327HTSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BCW68GE6327HTSA1 delivers superior performance in diverse environments. Infineon Technologies's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 330 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Infineon Technologies
BC848BE6433
Central Semiconductor Corp
2N4923 PBFREE
Rohm Semiconductor
2SAR513PFRAT100
Nexperia USA Inc.
PBSS4330PASX
onsemi
TIP30CG
onsemi
S2SA1774G
NXP USA Inc.
PBSS4160PANPS115
onsemi
KSD1616AGBU
Sanyo
2SB1229T-AA
Diodes Incorporated